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宽带隙半导体纳米晶的制备及光电性能

时间:2019-03-02 14:46来源:毕业论文
结合纳米晶的光电转换能力和石墨烯优异的导电能力,制备半导体纳米晶-石墨烯复合材料光电探测器,所制备的氧化锆纳米晶在波长为270nm左右的有吸收峰

摘要纳米氧化锆作为宽带隙材料,其禁带宽度为5eV,具有分立的电子能级,尺寸及组分依赖的能级间距,由于其优异的可调控的光学性能在生物荧光标记、电致发光、高效光电转化器件中具有潜在的应用。然而,半导体纳米晶的尺寸较小,稳定性差,影响纳米晶之间的电荷传输,导致半导体纳米晶体系具有极低电导率和光电导率,限制了它们在光电方面应用。本课题结合纳米晶的光电转换能力和石墨烯优异的导电能力,制备半导体纳米晶-石墨烯复合材料光电探测器,所制备的氧化锆纳米晶在波长为270nm左右的有吸收峰,其光致发光峰随着激发波长增加发生红移,表明所制备的氧化锆纳米晶中有不同结构的发光中心,在石墨烯片上蒸镀叉指电极,再旋涂氧化锆纳米晶制成了复合结构的紫外光探测器,研究了其紫外光响应特性,结果表明,产物对240,260nm处的紫外光具有一定相应,石墨烯的存在能够提高光生载流子从纳米晶到石墨烯上转移能力,有助于光电特性的改善。 33542
 关键词   氧化锆   石墨烯  半导体  紫外探测器
毕业论文设计说明书外文摘要
Title   Zircon graphene electrode / oxide semiconductor complex And Performance                                             源`自*六)维[论*文'网www.lwfree.cn
Abstract
Zirconia as a broadband-based material, which the band gap is 5eV fluctuations. The band gap can be obtained according to the preparation method of varying factors such as material. But by the wavelength of the excitation light which is maintained at 270nm fluctuations. Demonstrated its absorption in the ultraviolet range. However, a majority of the oxide as oxide criticized. Its conductivity is not good. By exploring the experiment, we can doping, heat treatment, etc. can be treated zirconia increase its conductivity, making it ideal semiconductor material. Thus, making it a relatively good semiconductor material Ultraviolet Detectors. Zirconia at a wavelength of about 270nm spectrum has a more obvious absorption peak. By vacuum deposition to silicon as the substrate, together with a layer of graphene to increase its electrical conductivity of the electrode material in view of its conductivity priority issue with the gold, cook interdigital electrodes. The response of the test electrode preparation obtained in this regard has been verified. Zirconium oxide in the range of UV ultraviolet detector has a natural advantage, no need to filter as traditional as GaAs, significant cost savings and its procedures.
Keywords  Zirconia   Graphene   Ultraviolet Detectors  Semiconductor
目   次
1    引言 1
1.1制备方法2
1.2衬底选择3
1.3电极材料6
1.4仪器设备8
2  实验 9
2.1氧化锆的制备10
2.2硅片的前处理10
2.3石墨烯的转移12
3   蒸镀电极13
3.1蒸镀实验操作15
3.2配置氧化锆丙酮溶液16
4样品测试结果与分析17
4.1紫外吸收光谱18
4.2表征XRD19
4.3透射电镜21
4.4光响应度测试22
结论23
致谢24
参考文献25
1    引言
由于紫外探测器在军用和民用方面都比较广泛,需求带动生产力的发展,由此,紫外探测器的材料受到了大家的追捧。其最基本原理就是物质受到一定波长的光照射,从而产生光电子的过程。更深一层意思就是电子能级跃迁。随着半导体的热潮,越来越多的半导体材料得到发展,从最初的单晶半导体,到后来的掺杂半导体,针对各种用途与作用,我们更多的针对性开发材料,就本课题来说,紫外探测器的器件材料是我们研究的重点。最初的紫外探测器一代元素半导体材料Si以及后来开发的第二代化合物半导体GaAs等材料[1],虽然他方面都具有很优秀的潜质,但是由于具有禁带宽度小、器件长波截止波长大、工作温度受到限制等特点而使得器件的特性及使用存在很大局限性,不能很好地满足目前军事和民用系统的要求。加之作为紫外探测器的材料,还需要支出昂贵的滤光过程,使得成本变得高了很多,颇有得不偿失的意味。 宽带隙半导体纳米晶的制备及光电性能:http://www.lwfree.cn/cailiao/20190302/30701.html
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